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Epitaxial growth of SrTiO₃ thin film on Si by laser molecular beam epitaxy

机译:激光分子束外延在Si上外延生长SrTiO₃薄膜

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摘要

SrTiO₃ thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO₃ was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO₃/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO₃ and the interfacial structure. Electrical measurements revealed that the SrTiO₃ film was highly resistive.
机译:利用超薄Sr层作为模板,通过激光分子束外延将SrTiO 3薄膜沉积在Si(001)晶片上。 X射线衍射测量表明,SrTiO 3结晶良好并与Si外延取向。在透射电子显微镜中的横截面观察表明,SrTiO 3 / Si界面是尖锐,光滑和完全结晶的。发现Sr模板的厚度是影响SrTiO 3的质量和界面结构的关键因素。电学测量表明,SrTiO 3膜具有高电阻性。

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